ssf 6 014 j7 ? silikron semiconductor co.,ltd. 20 1 4 . 0 3 . 2 0 version : 1. 2 page 1 of 6 www.silikron.com main product characteristics: features and benefits : description : a bsolute m ax rating : symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 40 a continuous drain current, v gs @ 10v ( silicon limited ) 60 i dm pulsed drain current 8 0 p d @tc = 25c power dissipation 115 w linear derating factor 0.74 w/c v ds drain - source voltage 60 v v gs gate - to - source voltage 2 0 v e as single pulse avalanche energy @ l=0.3mh 235 mj i as avalanche current @ l=0.3 mh 39 a t j t stg operating junction and storage temperature range - 55 to + 175 c v dss 60 v r ds (on) 1 4 m (typ . ) i d 40 a schematic d iagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applic ations ? u ltra low on - resistance with low gate charge ? f ast switching and reverse body recovery ? 17 5 operating temperature it utilizes the latest processing techniques to ach ieve the high cell density and reduces the on - resistance with high repetitive a valanche rating . these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications . pqfn 5 x 6 pin assignment
ssf 6014 j7 ? silikron semiconductor co.,ltd . 20 1 4 . 0 3 . 2 0 version : 1. 2 page 2 of 6 www.silikron.com thermal resistance symbol characteristics typ. max. units r jc junction - to - case 1.3 1 /w r j a junction - to - ambient 62 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max . units conditions v ( b r) dss drain - to - source breakdown voltage 60 v v gs = 0v, id = 250a r ds(on) static drain - to - source on - resistance 1 4 1 6 m v gs =10v , i d = 30 a v gs(th) gate threshold voltage 2 4 v v ds = v gs , i d = 250a i dss drain - to - source leakage current 1 a v ds = 60 v,v gs = 0v 10 t j = 1 50 c i gss gate - to - source forward leakage 1 0 0 n a v gs = 20 v - 1 0 0 v gs = - 20 v q g total gate charge 45 nc i d = 15 a , v ds = 30 v , v gs = 10v q gs gate - to - source charge 4 q gd gate - to - drain("miller") charge 15 t d(on) turn - on delay time 1 5 ns v gs =10v, vds= 30 v, r l = 15 , r gen = 2.5 t r rise time 14 t d(off) turn - off delay time 40 t f fall time 7.3 c iss input capacitance 1480 pf v gs = 0v v ds = 25 v ? = 1m hz c oss output capacitance 190 c rss reverse transfer capacitance 135 source - drain ratings and characteristics symbol parameter min. typ. max . units conditions i s continuous source current (body diode) 40 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current ( body diode ) 8 0 a v sd diode forward voltage 1 .3 v i s = 30 a, v gs =0v t rr reverse recovery time 33 ns t j = 25c , i f = 15 a, di/dt = 10 0a/s q rr reverse recovery charge 61 nc
ssf 6014 j7 ? silikron semiconductor co.,ltd . 20 1 4 . 0 3 . 2 0 version : 1. 2 page 3 of 6 www.silikron.com test circuits and waveforms eas test circuit gate charge test circuit switching time test circuit s witch ing waveforms n otes : c ontinuous current t e s ted by surface mounted on a 1 inch 2 fr - 4 board with 2oz copper. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature , using junc tion - to - case thermal resistance . the value of r j a is measured with the device mounted on 1 in 2 fr - 4 board with 2oz. copper, in a still air environment with ta =25c
ssf 6014 j7 ? silikron semiconductor co.,ltd . 20 1 4 . 0 3 . 2 0 version : 1. 2 page 4 of 6 www.silikron.com mechanical data pqfn 5x6 package outline dimension. (unit: mm)
ssf 6014 j7 ? silikron semiconductor co.,ltd . 20 1 4 . 0 3 . 2 0 version : 1. 2 page 5 of 6 www.silikron.com ordering and marking information device marking: ssf 6014 j7 package (available) pqfn 5x6 operating temperature range c : - 55 to 175 oc devices per unit package type units/ t ape t ap es/inner box units/inner box inner boxes/carton box units/carton box pqfn 5 x 6 3000 1 0 30 000 4 120000 reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =1 5 0 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
ssf 6014 j7 ? silikron semiconductor co.,ltd . 20 1 4 . 0 3 . 2 0 version : 1. 2 page 6 of 6 www.silikron.com attention: any and all silikron prod ucts described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life - support systems, aircraft's control systems, or other ap plications whose failure can be reasonably ex p ected to result in serious physical and/or material damage. consult with your silikron representative nearest you before using any silikron products described or contained herein in such applications. silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all silikron products described or contained herein. specifications of any and all silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customers products or equipment. to verify s ymptoms and states that cannot be evaluated in an independent device, th e customer should a lways evaluate and test devices mounted in the customers products or equipment. silikron semiconductor co.,ltd. strives to supply high - quality high - reliability products. however, any and all semiconductor products fail with some probability. it is pos sible that these probabilistic failures could give rise to accident s or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that th ese kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all silikron products(inclu ding technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accorda nce with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of silikron semiconductor co.,ltd. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. silikron believes information herein is accurate and re liable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. any and all information described or contained herein are subject to change without notice due to pr oduct/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the silikron product that you intend to use. customer service worldwide sales and service : sales@ silikron .com technical support: technical@ silikron .com suzhou silikron semiconductor corp. building 11a suchun industrial square, 428# xinglong street, suzhou p.r. chin a tel: (86 - 512 ) 62560688 fax: (86 - 512) 65160705 e - mail: sales@ silikron .com
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